dimensions in inches and (millimeters) 0.000 (0.00) 0.012 (0.30) 0.013 (0.35) 0.004 (0.10) 0.018 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0.85) 0.036 (0.91) 0.024 (0.61) 0.016 (0.40) 0.032 (0.80) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) ref 0.105 (2.67) 0.025 (0.635) 0.100 (2.54) 0.030 (0.762) 0.050 (1.27) cathode band 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.086 (2.18) 0.074 (1.88) 0.087 (2.20) 0.103 (2.60) case style smp maximum ratings & thermal characteristics (t a = 25? unless otherwise noted.) parameter symbol es1pa es1pb es1pc ES1PD unit device marking code ea eb ec ed maximum reverse voltage v rm 50 100 150 200 v maximum average forward rectified current see fig.1 i f(av) 1.0 a peak forward surge current 10ms single half sine-wave superimposed on rated load i fsm 30 a t ypical thermal resistance (1) r ja 105 r jl 15 ?/w r jc 20 operating junction and storage temperature range t j , t stg 55 to +150 ? electrical characteristics (t a = 25? unless otherwise noted.) parameter symbol value unit maximum instantaneous forward voltage (2) at i f =0.6a, t j =25? v f 0.865 v at i f =1a, t j =25 ? 0.920 maximum reverse current t j = 25? 5.0 ? at rated vrm (2) t j =125? i r 500 maximum reverse recovery time at i f =0.5a, i r =1a, i rr =0.25a trr 15 ns t ypical reverse recovery time at t j =25? 25 at i f = 1.0a, v r = 30v dv/dt = 50a/ s, i rr = 10% irm t j =100? trr 30 ns t ypical reverse recovery time at t j =25? 8 at i f = 1.0a, v r = 30v dv/dt = 50a/ s, i rr = 10% irm t j =100? qrr 10 nc t ypical junction capacitance at 4.0v, 1mhz c j 10 pf notes : (1) thermal resistance from junction to ambient and junction to lead mounted on p.c.b. with 5.0 x 5.0mm copper pad areas. r jl is measured at the ter- minal of cathode band. r jc is measured at the top centre of the body (2) pulse test: 300 s pulse width, 1% duty cycle features ?very low profile - typical height of 1.0mm ?for surface mount application ?glass passivated chip junction ultrafast recovery times for high efficiency low forward voltage, low power loss built in strain relief, ideal for automated placement ?high temperature soldering: 260? maximum/10 seconds at terminals meets msl level 1 per j-std-020c mechanical data case: smp t erminals: matte tin plated (e3 suffix) leads, solderable per j-std-002b and mil-std-750, method 2026 polarity: color band denotes cathode end w eight: 0.0009 oz., 0.024 g epoxy meets ul 94v-0 flammability rating mounting pad layout es1pa thru ES1PD v ishay semiconductors formerly general semiconductor high current density surface mount ultrafast rectifiers reverse voltage 50 to 200 v forward current 1.0 a reverse recovery time 15 ns document number 88918 www.vishay.com 23-sep-04 1 new product
fig. 2 ?maximum non-repetitive peak forward surge current peak forward surge current (a) number of cycles at 50 h z 0 1.2 80 90 100 110 120 130 140 150 fig. 1 ?maximum forward current derating curve a verage forward rectified current (a) lead temperature ( c) 0.4 0.6 0.8 1.2 1.4 instantaneous forward voltage (v) fig. 3 ?typical instantaneous forward characteristics 0.01 1 10 100 fig. 4 ?typical reverse leakage characteristics instantaneous reverse current ( a) percent of rated peak reverse voltage (%) 0.8 1.0 0.2 0.4 0.6 20 40 60 80 100 0.1 1 10 100 0.1 10 1 100 instantaneous forward current (a) reverse voltage (v) junction capacitance (pf) 1 10 100 fig. 5 ?typical junction capacitance t, pulse duration (sec.) t ransien thermal impedance ( c/w) fig. 6 ?typical transient thermal impedance 1 10 100 10 20 30 0 0.1 1 10 100 1 100 0.1 1000 10 30 50 70 90 0.01 05 15 25 1.0 0.01 0.2 10000 1000 10 t l measured at the cathode band terminal t j = 150 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 150 c es1pa thru ES1PD v ishay semiconductors formerly general semiconductor ratings and characteristic curves (t a = 25? unless otherwise noted) www.vishay.com document number 88918 2 23-sep-04
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